*,, una. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 md918, a, b (silicon) md918f, af, bf multiple silicon annular transistors . . . designed for um at differential amplifiers, dual high frequency amplifier!, front end detectors and temperature compensation applications. ? low collector-emitter saturation voltage ? vce(mt) ~ 2 we * 'c " 10 madc ? dc current gain - 50 (mini 9 ic = 3.0 madc ? high current-gain - bandwidth product - fj - 600 mhz s> ic - 4-0 madc maximum ratings rating collector -emitter voltage collector-bate voltage emitter base voltage collector current - continuous tots' power dissipation (? ta * 25c md918.a.b md918f,af,bf derate above 26c md918.a.b m09t8f.af.bf total power dissipation ? tq - 25c md918.a.b md918f,af,bf derate above 25c md918.a.b md918f.af.bf operating and storage junction temperature range symbol vceo vcb veb ig pd pd tj.t,,, value is 30 3.0 so one di. 560 360 3.14 2.0 1.4 0.7 8.0 4.0 all die 600 400 3-4z 228 2.0 1.4 11.4 8.0 -65 to +200 unit vdc vdc vdc madc mw n*?/c watts mv?/c c thermal characteristics charactarietic thermaj resistance, junction to ambient mo918,a,b mo918f.af.bf thermal resistance, junction to case md918.a.b md918f.af.bf coupling ftctori md91b,a,b md918f.af.bf symbol "aja-?-^r*" ?^3-au^ moc18 mo91?a mo01ib styltli n? i coileaon 2.iasi 1. edittca 4. omitted ? emrter 1 mm j.couectos b. ohitteo cateatwl? mm1 mini md91 r. t' if style 1 pini u 1. i t. e t. u 7. c 1- c cam jeattn run \ * v -?a ^*t ft ^?l juo *inr~ ct1 ^p r ? inuuabtimi ? nre * tn --!? i c3e -_il 1 _ j. 0. ' it tl? -jl-1^! ?u nw t.40 oj? - chi rtk- v t c k i c "hul ?ax ^ ftr- if iaf ibf r ? ~ 1 j. riz t 1 1 = 1 1 z 1 =3' i ? i.u t'lr iitted \tt )l lector iuectoh toa^j .. w t,10 k : ' ,h ^-if ?v ^ h - it ul j--u ?r"?sr >k u4i s till w 4 ul it^v 8 - "h j? ja h | -u %sr um 1 . & . . 1c nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice, fnfbrmation furnished by n.i semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. n.i semi-conductors entourages customers to verify that datasheets are current before placing orders. oiinlitv
md918,a.b, md918f.af.bf (continued) thermal coupling and effective thermal resistance in multiple chip devices. coupling of h??t httween die occurl. the junction temperature cm be calculated ?i follows: 111 pd1 where atjj is the chang* in junction temperature of die 1 r81 tnd h?2 '? the thermal resistance of die 1 and die 2 pd , and pd j ii th* power diuipetad in die 1 end die 2 k$2 n the thermal coupling between die 1 end die 2 an effective package thermal resistance can be defined a> follow*: (2) rsi.effi - where: pryr is the total package power dissipation. assuming equal thermal refinance for each die. equation {11 simplifies to (31 (po, for the conditions where pqi ? pd2, pryr " 2po. equation (31 can be further simplified end by iubstituting into equation (2) results in r? |
